FGH20N60SFDTU TO-247AB-3

Symbol Micros: TFGH20N60sfdtu

86488

TFGH20N60sfdtu

Contractor Symbol:

Case : TO247

Datasheet

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Single IGBT Transistors 600V 20A Field Stop ;

Parameters

Gate charge:	65nC
Max. dissipated power:	165W
Max collector current (impulse):	60A
Max. collector current:	40A
Forvard volatge [Vgeth]:	4,0V ~ 6,5V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FGH20N60SFDTU RoHS Case style: TO247  

In stock:

32 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	3,4694	3,0816	2,8489	2,7337	2,6679

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	65nC
Max. dissipated power:	165W
Max collector current (impulse):	60A
Max. collector current:	40A
Forvard volatge [Vgeth]:	4,0V ~ 6,5V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT

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