FGH40N60SFDTU

Symbol Micros: TFGH40N60sfdtu

91139

TFGH40N60sfdtu

Contractor Symbol:

Case : TO247

Datasheet

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IGBT 600V 80A 290W

Parameters

Gate charge:	120nC
Max. dissipated power:	290W
Max collector current (impulse):	120A
Max. collector current:	80A
Forvard volatge [Vgeth]:	4,0V ~ 6,5V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FGH40N60SFDTU RoHS Case style: TO247  

In stock:

36 pcs.

Quantity of pcs.	1+	5+	30+	90+	180+
Net price (EUR)	4,0354	3,4680	3,2056	3,1323	3,1039

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Packaging:
30/90 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: FGH40N60SFDTU Case style: TO247  

External warehouse:

660 pcs.

Quantity of pcs.	90+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	3,1039

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Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	120nC
Max. dissipated power:	290W
Max collector current (impulse):	120A
Max. collector current:	80A
Forvard volatge [Vgeth]:	4,0V ~ 6,5V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT

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