FGH40N60UFDTU

Symbol Micros: TFGH40N60ufdtu

91142

TFGH40N60ufdtu

Contractor Symbol:

Case : TO247

Datasheet

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IGBT 600V 80A 290W

Parameters

Gate charge:	120nC
Max. dissipated power:	290W
Max collector current (impulse):	120A
Max. collector current:	80A
Forvard volatge [Vgeth]:	4,0V ~ 6,5V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FGH40N60UFDTU RoHS Case style: TO247  

In stock:

28 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	4,1682	3,7020	3,4227	3,2843	3,2058

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Packaging:
30 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semiconductor Manufacturer part number: FGH40N60UFDTU Case style: TO247  

External warehouse:

2660 pcs.

Quantity of pcs.	450+ (Please wait for the order confirmation)
Net price (EUR)	3,2058

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Packaging:
450

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Gate charge:	120nC
Max. dissipated power:	290W
Max collector current (impulse):	120A
Max. collector current:	80A
Forvard volatge [Vgeth]:	4,0V ~ 6,5V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	600V
Operating temperature (range):	-55°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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