FGH40N60UFDTU

Symbol Micros: TFGH40N60ufdtu

91142

TFGH40N60ufdtu

Contractor Symbol:

Case : TO247

Datasheet

Technical drawing Add to favourites

IGBT 600V 80A 290W

Parameters

Gate charge:	120nC
Max. dissipated power:	290W
Max collector current (impulse):	120A
Max. collector current:	80A
Forvard volatge [Vgeth]:	4,0V ~ 6,5V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FGH40N60UFDTU RoHS Case style: TO247  

In stock:

28 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	4,1745	3,7076	3,4279	3,2892	3,2106

Add to comparison tool Add inquiry (RFQ)

Packaging:
30 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semiconductor Manufacturer part number: FGH40N60UFDTU Case style: TO247  

External warehouse:

330 pcs.

Quantity of pcs.	90+ (Please wait for the order confirmation)
Net price (EUR)	3,2106

Add to comparison tool Add inquiry (RFQ)

Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Gate charge:	120nC
Max. dissipated power:	290W
Max collector current (impulse):	120A
Max. collector current:	80A
Forvard volatge [Vgeth]:	4,0V ~ 6,5V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	600V
Operating temperature (range):	-55°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.