FGH40T120SMD TO-247-3L

Symbol Micros: TFGH40T120smd

86487

TFGH40T120smd

Contractor Symbol:

Case : TO247

Datasheet

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Single IGBT Transistors 1200V 40A FS2 Trench IGBT; 1.8V ;

Parameters

Gate charge:	370nC
Max. dissipated power:	555W
Max collector current (impulse):	160A
Max. collector current:	80A
Forvard volatge [Vgeth]:	4,9V ~ 7,5V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FGH40T120SMD RoHS Case style: TO247  

In stock:

40 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	7,6786	7,2117	6,9182	6,7656	6,6778

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Packaging:
30 Quantity (multiple: 1)

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Manufacturer:: ON-Semiconductor Manufacturer part number: FGH40T120SMD Case style: TO247  

External warehouse:

120 pcs.

Quantity of pcs.	30+ (Please wait for the order confirmation)
Net price (EUR)	6,6778

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Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Gate charge:	370nC
Max. dissipated power:	555W
Max collector current (impulse):	160A
Max. collector current:	80A
Forvard volatge [Vgeth]:	4,9V ~ 7,5V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	1200V
Operating temperature (range):	-55°C ~ 175°C
Gate-emitter voltage:	25V
Mounting:	THT

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