FGH60N60SMD

Symbol Micros: TFGH60N60smd

91144

TFGH60N60smd

Contractor Symbol:

Case : TO247

Datasheet

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IGBT 600V 120A 600

Parameters

Gate charge:	284nC
Max. dissipated power:	600W
Max collector current (impulse):	180A
Max. collector current:	120A
Forvard volatge [Vgeth]:	3,5V ~ 6,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FGH60N60SMD RoHS Case style: TO247  

In stock:

4 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	3,7505	3,3327	3,0811	2,9565	2,8850

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Packaging:
30 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semiconductor Manufacturer part number: FGH60N60SMD Case style: TO247  

External warehouse:

4770 pcs.

Quantity of pcs.	450+ (Please wait for the order confirmation)
Net price (EUR)	3,0272

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Packaging:
450

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Gate charge:	284nC
Max. dissipated power:	600W
Max collector current (impulse):	180A
Max. collector current:	120A
Forvard volatge [Vgeth]:	3,5V ~ 6,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	600V
Operating temperature (range):	-55°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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