FGH60N60SMD
Symbol Micros:
TFGH60N60smd
Case : TO247
IGBT 600V 120A 600
Parameters
| Gate charge: | 284nC |
| Max. dissipated power: | 600W |
| Max. collector current: | 120A |
| Max collector current (impulse): | 180A |
| Forvard volatge [Vgeth]: | 3,5V ~ 6,0V |
| Case: | TO247 |
| Manufacturer: | ON SEMICONDUCTOR |
| Gate charge: | 284nC |
| Max. dissipated power: | 600W |
| Max. collector current: | 120A |
| Max collector current (impulse): | 180A |
| Forvard volatge [Vgeth]: | 3,5V ~ 6,0V |
| Case: | TO247 |
| Manufacturer: | ON SEMICONDUCTOR |
| Collector-emitter voltage: | 600V |
| Operating temperature (range): | -55°C ~ 175°C |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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