FGH75T65UPD TO247AB
Symbol Micros:
TFGH75T65upd
Case : TO247
IGBT Transistor Chip N-CH 650V 150A
Parameters
| Gate charge: | 578nC |
| Max. dissipated power: | 375W |
| Max. collector current: | 150A |
| Max collector current (impulse): | 225A |
| Forvard volatge [Vgeth]: | 4,0V ~ 7,5V |
| Case: | TO247 |
| Manufacturer: | ON SEMICONDUCTOR |
| Gate charge: | 578nC |
| Max. dissipated power: | 375W |
| Max. collector current: | 150A |
| Max collector current (impulse): | 225A |
| Forvard volatge [Vgeth]: | 4,0V ~ 7,5V |
| Case: | TO247 |
| Manufacturer: | ON SEMICONDUCTOR |
| Collector-emitter voltage: | 650V |
| Operating temperature (range): | -55°C ~ 175°C |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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