FGL60N100BNTD

Symbol Micros: TFGL60N100bntd

91149

TFGL60N100bntd

Contractor Symbol:

Case : TO264

Datasheet

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IGBT 1000V 60A 180W

Parameters

Gate charge:	275nC
Max. dissipated power:	180W
Max collector current (impulse):	200A
Max. collector current:	42A
Forvard volatge [Vgeth]:	4,0V ~ 7,0V
Case:	TO264
Manufacturer:	ON SEMICONDUCTOR

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• Parameters

Gate charge:	275nC
Max. dissipated power:	180W
Max collector current (impulse):	200A
Max. collector current:	42A
Forvard volatge [Vgeth]:	4,0V ~ 7,0V
Case:	TO264
Manufacturer:	ON SEMICONDUCTOR
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	1000V
Gate-emitter voltage:	25V
Mounting:	THT

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