FQA13N80 Fairchild

Symbol Micros: TFQA13n80
Contractor Symbol:
Case : TO 3P
N-MOSFET 800V 12.6A 300W FQA13N80_F109
Parameters
Open channel resistance: 750mOhm
Max. drain current: 12,6A
Max. power loss: 300W
Case: TO 3P
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 800V
Max. gate-source Voltage: 30V
Manufacturer:: ON-Semiconductor Manufacturer part number: FQA13N80_F109 RoHS Case style: TO 3P  
In stock:
20 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 3,1494 2,7077 2,4467 2,3208 2,2499
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Packaging:
30
Manufacturer:: ON-Semiconductor Manufacturer part number: FQA13N80_F109 RoHS Case style: TO 3P  
In stock:
20 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 200+
Net price (EUR) 3,1494 2,5955 2,3849 2,2751 2,2499
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Packaging:
20
Manufacturer:: ON-Semiconductor Manufacturer part number: FQA13N80-F109 Case style: TO 3P  
External warehouse:
450 pcs.
Quantity of pcs. 60+ (Please wait for the order confirmation)
Net price (EUR) 3,2788
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Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 750mOhm
Max. drain current: 12,6A
Max. power loss: 300W
Case: TO 3P
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 800V
Max. gate-source Voltage: 30V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: THT