FQA13N80 Fairchild

Symbol Micros: TFQA13n80
Contractor Symbol:
Case : TO 3P
N-MOSFET 800V 12.6A 300W FQA13N80_F109
Parameters
Open channel resistance: 750mOhm
Max. drain current: 12,6A
Max. power loss: 300W
Case: TO 3P
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FQA13N80_F109 RoHS Case style: TO 3P  
In stock:
22 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 3,2852 2,9178 2,6979 2,5879 2,5271
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Packaging:
30
Manufacturer:: ON-Semicoductor Manufacturer part number: FQA13N80_F109 RoHS Case style: TO 3P  
In stock:
20 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 200+
Net price (EUR) 3,2852 2,8243 2,6441 2,5481 2,5271
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Packaging:
20
Manufacturer:: ON-Semicoductor Manufacturer part number: FQA13N80-F109 Case style: TO 3P  
External warehouse:
350 pcs.
Quantity of pcs. 60+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 3,1547
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Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 750mOhm
Max. drain current: 12,6A
Max. power loss: 300W
Case: TO 3P
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT