FQA13N80 Fairchild

Symbol Micros: TFQA13n80

113828

TFQA13n80

Contractor Symbol:

Case : TO 3P

Datasheet

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N-MOSFET 800V 12.6A 300W FQA13N80_F109

Parameters

Open channel resistance:	750mOhm
Max. drain current:	12,6A
Max. power loss:	300W
Case:	TO 3P
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FQA13N80_F109 RoHS Case style: TO 3P  

In stock:

20 pcs.

Quantity of pcs.	1+	5+	20+	100+	200+
Net price (EUR)	3,2660	2,6916	2,4732	2,3593	2,3332

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Packaging:
20 Quantity (multiple: 1)

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Manufacturer:: ON-Semiconductor Manufacturer part number: FQA13N80_F109 RoHS Case style: TO 3P  

In stock:

20 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	3,2660	2,8079	2,5373	2,4068	2,3332

Add to comparison tool Add inquiry (RFQ)

Packaging:
30 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	750mOhm
Max. drain current:	12,6A
Max. power loss:	300W
Case:	TO 3P
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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