FQA9N90C

Symbol Micros: TFQA9n90c

247652

TFQA9n90c

Contractor Symbol:

Case : TO-3P

Datasheet

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Transistor: N-MOSFET; unipolar; 900V; 5.7A; 280W; TO3PN FQA9N90C-F109 FQA9N90C_F109

Parameters

Open channel resistance:	1,4Ohm
Max. drain current:	9A
Max. power loss:	280W
Case:	TO-3P
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	900V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	1,4Ohm
Max. drain current:	9A
Max. power loss:	280W
Case:	TO-3P
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	900V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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