FQAF11N90C Fairchild

Symbol Micros: TFQAF11n90c

113819

TFQAF11n90c

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Case : TO 3

Datasheet

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N-MOSFET 900V 7A 120W

Parameters

Open channel resistance:	1,1Ohm
Max. drain current:	7A
Max. power loss:	120W
Case:	TO 3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	900V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	1,1Ohm
Max. drain current:	7A
Max. power loss:	120W
Case:	TO 3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	900V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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