FQB12P20TM

Symbol Micros: TFQB12p20tm
Contractor Symbol:
Case : TO263 (D2PAK)
Transistor P-Channel MOSFET; 200V; 30V; 470mOhm; 11,5A; 120W; -55°C ~ 150°C;
Parameters
Open channel resistance: 470mOhm
Max. drain current: 11,5A
Max. power loss: 120W
Case: TO263 (D2PAK)
Manufacturer: Fairchild
Max. drain-source voltage: 200V
Transistor type: P-MOSFET
Manufacturer:: Fairchild Manufacturer part number: FQB12P20TM RoHS Case style: TO263 (D2PAK)  
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,2047 0,9206 0,7609 0,6669 0,6341
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Packaging:
50
Manufacturer:: ON-Semicoductor Manufacturer part number: FQB12P20TM Case style: TO263 (D2PAK)  
External warehouse:
800 pcs.
Quantity of pcs. 800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,8634
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Packaging:
800
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FQB12P20TM Case style: TO263 (D2PAK)  
External warehouse:
3200 pcs.
Quantity of pcs. 800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,8841
Add to comparison tool
Packaging:
800
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 470mOhm
Max. drain current: 11,5A
Max. power loss: 120W
Case: TO263 (D2PAK)
Manufacturer: Fairchild
Max. drain-source voltage: 200V
Transistor type: P-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD