FQB12P20TM

Symbol Micros: TFQB12p20tm

116327

TFQB12p20tm

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor P-Channel MOSFET; 200V; 30V; 470mOhm; 11,5A; 120W; -55°C ~ 150°C;

Parameters

Open channel resistance:	470mOhm
Max. drain current:	11,5A
Max. power loss:	120W
Case:	TO263 (D2PAK)
Manufacturer:	Fairchild
Max. drain-source voltage:	200V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Fairchild Manufacturer part number: FQB12P20TM RoHS Case style: TO263 (D2PAK)  

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,2127	0,9266	0,7659	0,6713	0,6382

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: FQB12P20TM Case style: TO263 (D2PAK)  

External warehouse:

1600 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,8146

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Packaging:
800

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	470mOhm
Max. drain current:	11,5A
Max. power loss:	120W
Case:	TO263 (D2PAK)
Manufacturer:	Fairchild
Max. drain-source voltage:	200V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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