FQB19N20LTM

Symbol Micros: TFQB19n20ltm
Contractor Symbol:
Case : TO263 (D2PAK)
N-MOSFET 21A 200V 140W 0.14Ω
Parameters
Open channel resistance: 150mOhm
Max. drain current: 21A
Max. power loss: 140W
Case: TO263 (D2PAK)
Manufacturer: Fairchild
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FQB19N20LTM Case style: TO263 (D2PAK)  
External warehouse:
800 pcs.
Quantity of pcs. 800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,7125
Add to comparison tool
Packaging:
800
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FQB19N20LTM Case style: TO263 (D2PAK)  
External warehouse:
1600 pcs.
Quantity of pcs. 800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,6653
Add to comparison tool
Packaging:
800
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FQB19N20LTM Case style: TO263 (D2PAK)  
External warehouse:
800 pcs.
Quantity of pcs. 800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,7301
Add to comparison tool
Packaging:
800
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 150mOhm
Max. drain current: 21A
Max. power loss: 140W
Case: TO263 (D2PAK)
Manufacturer: Fairchild
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD