FQB19N20LTM

Symbol Micros: TFQB19n20ltm

116328

TFQB19n20ltm

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

Technical drawing Add to favourites

N-MOSFET 21A 200V 140W 0.14Ω

Parameters

Open channel resistance:	150mOhm
Max. drain current:	21A
Max. power loss:	140W
Case:	TO263 (D2PAK)
Manufacturer:	Fairchild
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FQB19N20LTM Case style: TO263 (D2PAK)  

External warehouse:

1600 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,6934

Add to comparison tool Add inquiry (RFQ)

Packaging:
800

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: FQB19N20LTM Case style: TO263 (D2PAK)  

External warehouse:

1600 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,7325

Add to comparison tool Add inquiry (RFQ)

Packaging:
800

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	150mOhm
Max. drain current:	21A
Max. power loss:	140W
Case:	TO263 (D2PAK)
Manufacturer:	Fairchild
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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