FQB34P10TM

Symbol Micros: TFQB34p10tm

116332

TFQB34p10tm

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor P-Channel MOSFET; 100V; 25V; 60mOhm; 33,5A; 155W; -55°C ~ 175°C;

Parameters

Open channel resistance:	60mOhm
Max. power loss:	155W
Max. drain current:	33,5A
Case:	TO263 (D2PAK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FQB34P10TM RoHS Case style: TO263 (D2PAK) Datasheet

In stock:

20 pcs.

Quantity of pcs.	1+	5+	20+	100+	200+
Net price (EUR)	3,1014	2,4226	2,1658	2,0314	2,0008

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Packaging:
20 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	60mOhm
Max. power loss:	155W
Max. drain current:	33,5A
Case:	TO263 (D2PAK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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