FQB5N90TM

Symbol Micros: TFQB5n90tm

116334

TFQB5n90tm

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

Technical drawing Add to favourites

N-MOSFET 5.4A 900V 158W 2.3Ω

Parameters

Open channel resistance:	2,3Ohm
Max. drain current:	5,4A
Max. power loss:	158W
Case:	TO263 (D2PAK)
Manufacturer:	Fairchild
Max. drain-source voltage:	900V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FQB5N90TM Case style: TO263 (D2PAK)  

External warehouse:

15200 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,4725

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Packaging:
800

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	2,3Ohm
Max. drain current:	5,4A
Max. power loss:	158W
Case:	TO263 (D2PAK)
Manufacturer:	Fairchild
Max. drain-source voltage:	900V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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