FQB6N80TM

Symbol Micros: TFQB6n80tm
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Case : TO263 (D2PAK)
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N-MOSFET 5.8A 800V 158W 1.95Ω
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Parameters
Open channel resistance: 1,95Ohm
Max. drain current: 5,8A
Max. power loss: 158W
Case: TO263 (D2PAK)
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FQB6N80TM RoHS Case style: TO263 (D2PAK) Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,5928 1,2157 1,0072 0,8831 0,8386
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Packaging:
10
Open channel resistance: 1,95Ohm
Max. drain current: 5,8A
Max. power loss: 158W
Case: TO263 (D2PAK)
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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