FQB6N80TM
Symbol Micros:
TFQB6n80tm
Case : TO263 (D2PAK)
N-MOSFET 5.8A 800V 158W 1.95Ω
Parameters
| Open channel resistance: | 1,95Ohm |
| Max. drain current: | 5,8A |
| Max. power loss: | 158W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | ON SEMICONDUCTOR |
| Max. drain-source voltage: | 800V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 1,95Ohm |
| Max. drain current: | 5,8A |
| Max. power loss: | 158W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | ON SEMICONDUCTOR |
| Max. drain-source voltage: | 800V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 30V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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