FQB6N80TM

Symbol Micros: TFQB6n80tm

57937

TFQB6n80tm

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 5.8A 800V 158W 1.95Ω

Parameters

Open channel resistance:	1,95Ohm
Max. drain current:	5,8A
Max. power loss:	158W
Case:	TO263 (D2PAK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	1,95Ohm
Max. drain current:	5,8A
Max. power loss:	158W
Case:	TO263 (D2PAK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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