FQD10N20CTM Fairchild

Symbol Micros: TFQD10n20ctm

92891

TFQD10n20ctm

Contractor Symbol:

Case : DPAK

Datasheet

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Transistor N-Channel MOSFET; 200V; 30V; 360mOhm; 7,8A; 50W; -55°C ~ 150°C; OBSOLETE; FQD10N20CTM-VB; TPM2007NK3; FQD10N20CTM-JSM;

Parameters

Open channel resistance:	360mOhm
Max. drain current:	7,8A
Max. power loss:	50W
Case:	DPAK
Manufacturer:	Fairchild
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FQD10N20CTM RoHS Case style: DPAK t/r  

In stock:

100 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	1,1891	0,7912	0,6554	0,5899	0,5665

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	360mOhm
Max. drain current:	7,8A
Max. power loss:	50W
Case:	DPAK
Manufacturer:	Fairchild
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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