FQD12N20LTM

Symbol Micros: TFQD12n20ltm

109617

TFQD12n20ltm

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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N-MOSFET 9A 200V 55W 0.28Ω

Parameters

Open channel resistance:	320mOhm
Max. drain current:	9A
Max. power loss:	55W
Case:	TO252 (DPACK)
Manufacturer:	Fairchild
Max. drain-source voltage:	200V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FQD12N20LTM RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

35 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,7386	0,4685	0,3693	0,3370	0,3208

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Packaging:
50 Quantity (multiple: 1)

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Manufacturer:: ON-Semiconductor Manufacturer part number: FQD12N20LTM Case style: TO252 (DPAK)  

External warehouse:

17500 pcs.

Quantity of pcs.	2500+ (Please wait for the order confirmation)
Net price (EUR)	0,3208

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Packaging:
2500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	320mOhm
Max. drain current:	9A
Max. power loss:	55W
Case:	TO252 (DPACK)
Manufacturer:	Fairchild
Max. drain-source voltage:	200V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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