FQD13N06LTM

Symbol Micros: TFQD13n06ltm

109618

TFQD13n06ltm

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

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Logic N-MOSFET 11A 60V 28W 0.115Ω

Parameters

Open channel resistance:	115mOhm
Max. drain current:	11A
Max. power loss:	28W
Case:	TO252 (DPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	115mOhm
Max. drain current:	11A
Max. power loss:	28W
Case:	TO252 (DPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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