FQD19N10LTM

Symbol Micros: TFQD19n10ltm

109623

TFQD19n10ltm

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

Technical drawing Add to favourites

N-MOSFET 15.6A 100V 50W 0.1Ω

Parameters

Open channel resistance:	110mOhm
Max. drain current:	15,6A
Max. power loss:	50W
Case:	TO252 (DPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FQD19N10LTM Case style: TO252 (DPACK)  

External warehouse:

5000 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3786

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Packaging:
2500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	110mOhm
Max. drain current:	15,6A
Max. power loss:	50W
Case:	TO252 (DPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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