FQD1N60CTM
Symbol Micros:
TFQD1n60ctm
Case : TO252/3 (DPAK)
N-Channel 600 V 11.5 Ohm Surface Mount Mosfet
Parameters
| Open channel resistance: | 3,4Ohm |
| Max. drain current: | 1A |
| Max. power loss: | 28W |
| Case: | TO252/3 (DPAK) |
| Manufacturer: | ON SEMICONDUCTOR |
| Max. drain-source voltage: | 600V |
| Transistor type: | N-MOSFET |
Manufacturer:: Fairchild
Manufacturer part number: FQD1N60CTM RoHS
Case style: TO252/3 (DPAK)
In stock:
85 pcs.
| Quantity of pcs. | 2+ | 15+ | 100+ | 300+ | 1000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,4987 | 0,2765 | 0,2189 | 0,2063 | 0,1997 |
| Open channel resistance: | 3,4Ohm |
| Max. drain current: | 1A |
| Max. power loss: | 28W |
| Case: | TO252/3 (DPAK) |
| Manufacturer: | ON SEMICONDUCTOR |
| Max. drain-source voltage: | 600V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 30V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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