FQD1N80TM

Symbol Micros: TFQD1n80tm

57939

TFQD1n80tm

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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Transistor N-Channel MOSFET; 800V; 30V; 20Ohm; 1A; 45W; -55°C ~ 150°C;

Parameters

Open channel resistance:	20Ohm
Max. drain current:	1A
Max. power loss:	45W
Case:	TO252 (DPAK)
Manufacturer:	Fairchild
Max. drain-source voltage:	800V
Max. gate-source Voltage:	30V

All parameters

Manufacturer:: Fairchild Manufacturer part number: FQD1N80TM RoHS Case style: TO252 (DPACK) t/r  

In stock:

75 pcs.

Quantity of pcs.	2+	15+	100+	300+	1000+
Net price (EUR)	0,5513	0,3065	0,2402	0,2274	0,2201

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	20Ohm
Max. drain current:	1A
Max. power loss:	45W
Case:	TO252 (DPAK)
Manufacturer:	Fairchild
Max. drain-source voltage:	800V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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