FQD2N100TM

Symbol Micros: TFQD2n100tm

57941

TFQD2n100tm

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

Technical drawing Add to favourites

N-MOSFET 1.6A 1000V 50W 9Ω

Parameters

Open channel resistance:	9Ohm
Max. drain current:	1,6A
Max. power loss:	50W
Case:	TO252 (DPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	1000V
Transistor type:	N-MOSFET

All parameters

         

 

Add inquiry (RFQ)

Item available on request

• Parameters

Open channel resistance:	9Ohm
Max. drain current:	1,6A
Max. power loss:	50W
Case:	TO252 (DPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	1000V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.