FQD2N100TM

Symbol Micros: TFQD2n100tm

57941

TFQD2n100tm

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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N-MOSFET 1.6A 1000V 50W 9Ω

Parameters

Open channel resistance:	9Ohm
Max. drain current:	1,6A
Max. power loss:	50W
Case:	TO252 (DPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	1000V
Max. gate-source Voltage:	30V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FQD2N100TM RoHS Case style: TO252 (DPAK) t/r  

In stock:

100 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,1689	0,8189	0,6954	0,6359	0,6153

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	9Ohm
Max. drain current:	1,6A
Max. power loss:	50W
Case:	TO252 (DPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	1000V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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