FQD2N60CTM

Symbol Micros: TFQD2n60ctm

109619

TFQD2n60ctm

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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Transistor N-Channel MOSFET; 600V; 30V; 4,7Ohm; 1,9A; 44W; -55°C ~ 150°C;

Parameters

Open channel resistance:	4,7Ohm
Max. drain current:	1,9A
Max. power loss:	44W
Case:	TO252 (DPAK)
Manufacturer:	Fairchild
Max. drain-source voltage:	600V
Max. gate-source Voltage:	30V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FQD2N60CTM RoHS Case style: TO252 (DPAK) t/r Datasheet

In stock:

75 pcs.

Quantity of pcs.	2+	10+	30+	100+	320+
Net price (EUR)	0,8338	0,5217	0,4329	0,3850	0,3622

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Packaging:
320 Quantity (multiple: 1)

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Manufacturer:: Fairchild Manufacturer part number: FQD2N60CTM RoHS Case style: TO252 (DPACK) t/r  

In stock:

25 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,8338	0,5217	0,4078	0,3691	0,3508

Add to comparison tool Add inquiry (RFQ)

Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	4,7Ohm
Max. drain current:	1,9A
Max. power loss:	44W
Case:	TO252 (DPAK)
Manufacturer:	Fairchild
Max. drain-source voltage:	600V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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