FQD2N60CTM

Symbol Micros: TFQD2n60ctm
Contractor Symbol:
Case : TO252 (DPAK)
Transistor N-Channel MOSFET; 600V; 30V; 4,7Ohm; 1,9A; 44W; -55°C ~ 150°C;
Parameters
Open channel resistance: 4,7Ohm
Max. drain current: 1,9A
Max. power loss: 44W
Case: TO252 (DPACK)
Manufacturer: Fairchild
Max. drain-source voltage: 600V
Max. gate-source Voltage: 30V
Manufacturer:: Fairchild Manufacturer part number: FQD2N60CTM RoHS Case style: TO252 (DPACK) t/r  
In stock:
25 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,8447 0,5285 0,4131 0,3739 0,3554
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Packaging:
50
Manufacturer:: ON-Semiconductor Manufacturer part number: FQD2N60CTM RoHS Case style: TO252 (DPAK) t/r Datasheet
In stock:
75 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 320+
Net price (EUR) 0,8447 0,5285 0,4385 0,3900 0,3670
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Packaging:
320
Manufacturer:: ON-Semiconductor Manufacturer part number: FQD2N60CTM Case style: TO252 (DPAK)  
External warehouse:
50000 pcs.
Quantity of pcs. 2500+ (Please wait for the order confirmation)
Net price (EUR) 0,3670
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Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 4,7Ohm
Max. drain current: 1,9A
Max. power loss: 44W
Case: TO252 (DPACK)
Manufacturer: Fairchild
Max. drain-source voltage: 600V
Max. gate-source Voltage: 30V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD