FQD5P20TM

Symbol Micros: TFQD5p20tm TOKMAS

400508

TFQD5p20tm TOKMAS

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

Technical drawing Add to favourites

Trans. P-Channel MOSFET; 200V; 30V; 1,4Ohm; 3,7A; 45W; -55°C ~ 150°C

Parameters

Open channel resistance:	1,4Ohm
Max. drain current:	3,7A
Max. power loss:	2,5W
Case:	TO252 (DPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	200V
Transistor type:	P-MOSFET

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Estimated date:
2025-09-30

Quantity of pcs.: 1

• Parameters

Open channel resistance:	1,4Ohm
Max. drain current:	3,7A
Max. power loss:	2,5W
Case:	TO252 (DPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	200V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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