FQD6N40CTM

Symbol Micros: TFQD6n40ctm

57942

TFQD6n40ctm

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

Technical drawing Add to favourites

N-MOSFET 4.5A 400V 48W 1Ω

Parameters

Open channel resistance:	1Ohm
Max. drain current:	4,5A
Max. power loss:	48W
Case:	TO252 (DPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	400V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FQD6N40CTM RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

40 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,8476	0,5360	0,4226	0,3849	0,3683

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: FQD6N40CTM Case style: TO252 (DPACK)  

External warehouse:

17500 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,5426

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Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	1Ohm
Max. drain current:	4,5A
Max. power loss:	48W
Case:	TO252 (DPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	400V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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