FQD8P10TM

Symbol Micros: TFQD8p10tm

109622

TFQD8p10tm

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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P-MOSFET 6.6A 100V 44W 0.53Ω

Parameters

Open channel resistance:	530mOhm
Max. power loss:	44W
Max. drain current:	6,6A
Case:	TO252 (DPAK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FQD8P10TM RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

12 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,7140	0,4480	0,3710	0,3313	0,3103

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	530mOhm
Max. power loss:	44W
Max. drain current:	6,6A
Case:	TO252 (DPAK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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