FQD8P10TM

Symbol Micros: TFQD8p10tm
Contractor Symbol:
Case : TO252 (DPACK)
P-MOSFET 6.6A 100V 44W 0.53Ω
Parameters
Open channel resistance: 530mOhm
Max. drain current: 6,6A
Max. power loss: 44W
Case: TO252 (DPAK)
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 100V
Transistor type: P-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FQD8P10TM RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
32 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,7335 0,4599 0,3821 0,3396 0,3184
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Packaging:
100
Manufacturer:: ON-Semicoductor Manufacturer part number: FQD8P10TM Case style: TO252 (DPACK)  
External warehouse:
93942 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3184
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Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FQD8P10TM Case style: TO252 (DPACK)  
External warehouse:
5000 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3184
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 530mOhm
Max. drain current: 6,6A
Max. power loss: 44W
Case: TO252 (DPAK)
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 100V
Transistor type: P-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD