FQD8P10TM

Symbol Micros: TFQD8p10tm
Contractor Symbol:
Case : TO252 (DPAK)
P-MOSFET 6.6A 100V 44W 0.53Ω
Parameters
Open channel resistance: 530mOhm
Max. drain current: 6,6A
Max. power loss: 44W
Case: TO252 (DPAK)
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 100V
Max. gate-source Voltage: 30V
Manufacturer:: ON-Semiconductor Manufacturer part number: FQD8P10TM RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
12 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,6971 0,4374 0,3622 0,3235 0,3030
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Packaging:
100
Open channel resistance: 530mOhm
Max. drain current: 6,6A
Max. power loss: 44W
Case: TO252 (DPAK)
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 100V
Max. gate-source Voltage: 30V
Transistor type: P-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD