FQP13N10

Symbol Micros: TFQP13n10

57950

TFQP13n10

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 12.8A 100V 65W 0.18Ω

Parameters

Open channel resistance:	180mOhm
Max. drain current:	12,8A
Max. power loss:	65W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	180mOhm
Max. drain current:	12,8A
Max. power loss:	65W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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