FQP13N10

Symbol Micros: TFQP13n10
Contractor Symbol:
Case : TO220
N-MOSFET 12.8A 100V 65W 0.18Ω
Parameters
Open channel resistance: 180mOhm
Max. drain current: 12,8A
Max. power loss: 65W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 180mOhm
Max. drain current: 12,8A
Max. power loss: 65W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 25V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT