FQP6N80C

Symbol Micros: TFQP6n80c

137818

TFQP6n80c

Contractor Symbol:

Case : TO220AB

Datasheet

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Trans MOSFET N-CH 60V 32A 3-Pin(3+Tab) TO-220AB

Parameters

Open channel resistance:	2,5Ohm
Max. power loss:	158W
Max. drain current:	5,5A
Case:	TO220AB
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FQP6N80C RoHS Case style: TO220AB  

In stock:

70 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,1433	0,8727	0,7233	0,6323	0,6020

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	2,5Ohm
Max. power loss:	158W
Max. drain current:	5,5A
Case:	TO220AB
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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