FQP9N50C

Symbol Micros: TFQP9n50c
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Case : TO220
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N-MOSFET 9A 500V 135W 0.8Ω
Parameters
Open channel resistance: 800mOhm
Max. drain current: 9A
Max. power loss: 135W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 800mOhm
Max. drain current: 9A
Max. power loss: 135W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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