FQPF2N60C

Symbol Micros: TFQPF2n60c

57952

TFQPF2n60c

Contractor Symbol:

Case : TO220iso

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 600V; 30V; 4,7Ohm; 2A; 23W; -55°C ~ 150°C;

Parameters

Open channel resistance:	4,7Ohm
Max. drain current:	2A
Max. power loss:	23W
Case:	TO220iso
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FQPF2N60C RoHS Case style: TO220iso  

In stock:

6 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,4766	1,1268	0,9320	0,8170	0,7771

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Packaging:
50 Quantity (multiple: 1)

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Manufacturer:: Fairchild Manufacturer part number: FQPF2N60C RoHS Case style: TO220iso Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,4766	1,1268	0,9320	0,8170	0,7771

Add to comparison tool Add inquiry (RFQ)

Packaging:
50 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	4,7Ohm
Max. drain current:	2A
Max. power loss:	23W
Case:	TO220iso
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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