FQPF3N80C

Symbol Micros: TFQPF3n80c

109624

TFQPF3n80c

Contractor Symbol:

Case : TO220iso

Datasheet

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N-MOSFET 3A 800V 39W 4.8Ω

Parameters

Open channel resistance:	4,8Ohm
Max. drain current:	3A
Max. power loss:	39W
Case:	TO220iso
Manufacturer:	Fairchild
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FQPF3N80C Case style: TO220iso  

External warehouse:

650 pcs.

Quantity of pcs.	200+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,7414

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Packaging:
50

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	4,8Ohm
Max. drain current:	3A
Max. power loss:	39W
Case:	TO220iso
Manufacturer:	Fairchild
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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