FQPF47P06-YDTU TO220-FORMED LEADS

Symbol Micros: TFQPF47p06ydtu

113925

TFQPF47p06ydtu

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Case : TO220/3Q iso

Datasheet

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P-MOSFET 60V 30A 62W

Parameters

Open channel resistance:	26mOhm
Max. drain current:	30A
Max. power loss:	62W
Case:	TO220/3Q iso
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	26mOhm
Max. drain current:	30A
Max. power loss:	62W
Case:	TO220/3Q iso
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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