FQPF6N90C

Symbol Micros: TFQPF6n90c

57955

TFQPF6n90c

Contractor Symbol:

Case : TO220iso

Datasheet

Technical drawing Add to favourites

N-MOSFET 6A 900V 56W 2.3Ω

Parameters

Open channel resistance:	2,3Ohm
Max. drain current:	6A
Max. power loss:	56W
Case:	TO220iso
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	900V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FQPF6N90C RoHS Case style: TO220iso  

In stock:

187 pcs.

Quantity of pcs.	1+	5+	50+	100+	300+
Net price (EUR)	2,1715	1,6668	1,4179	1,3874	1,3569

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	2,3Ohm
Max. drain current:	6A
Max. power loss:	56W
Case:	TO220iso
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	900V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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