FQT5P10TF

Symbol Micros: TFQT5P10TF VBS

366557

TFQT5P10TF VBS

Contractor Symbol:

Case : SOT223

Datasheet

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Transistor P-Channel MOSFET; 100V; 20V; 230mOhm; 3A; 6,5W; -55°C ~ 150°C;

Parameters

Open channel resistance:	230mOhm
Max. drain current:	3A
Max. power loss:	6,5W
Case:	SOT223
Manufacturer:	VBSEMI ELEC
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: VBsemi Manufacturer part number: FQT5P10TF-VB RoHS Case style: SOT223t/r Datasheet

In stock:

200 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,5894	0,3734	0,2935	0,2677	0,2560

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	230mOhm
Max. drain current:	3A
Max. power loss:	6,5W
Case:	SOT223
Manufacturer:	VBSEMI ELEC
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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