FQT7N10LTF

Symbol Micros: TFQT7n10ltf

120183

TFQT7n10ltf

Contractor Symbol:

Case : SOT223

Datasheet

Technical drawing Add to favourites

N-MOSFET 100V 1.7A

Parameters

Open channel resistance:	380mOhm
Max. drain current:	1,7A
Max. power loss:	2W
Case:	SOT223
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FQT7N10LTF RoHS Case style: SOT223t/r Datasheet

In stock:

26 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,6643	0,4208	0,3310	0,3026	0,2884

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Packaging:
100 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: FQT7N10LTF Case style: SOT223  

External warehouse:

1576000 pcs.

Quantity of pcs.	4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2884

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Packaging:
4000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	380mOhm
Max. drain current:	1,7A
Max. power loss:	2W
Case:	SOT223
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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