G01N20RE

Symbol Micros: TG01N20RE GO
Contractor Symbol:
Case : TO92
Transistor MOSFET; TO-92; N-Channel; YES ESD; 200V; 1.7A; 3W; 1.8V; 0.58Ω; 0.62Ω
Parameters
Open channel resistance: 720mOhm
Max. drain current: 1,7A
Max. power loss: 3W
Case: TO92
Manufacturer: GOFORD
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 720mOhm
Max. drain current: 1,7A
Max. power loss: 3W
Case: TO92
Manufacturer: GOFORD
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT