G01N20RE
Symbol Micros:
TG01N20RE GO
Case : TO92
Transistor MOSFET; TO-92; N-Channel; YES ESD; 200V; 1.7A; 3W; 1.8V; 0.58Ω; 0.62Ω
Parameters
Open channel resistance: | 720mOhm |
Max. drain current: | 1,7A |
Max. power loss: | 3W |
Case: | TO92 |
Manufacturer: | GOFORD |
Max. drain-source voltage: | 200V |
Transistor type: | N-MOSFET |
Open channel resistance: | 720mOhm |
Max. drain current: | 1,7A |
Max. power loss: | 3W |
Case: | TO92 |
Manufacturer: | GOFORD |
Max. drain-source voltage: | 200V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | THT |
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