G06N10 Goford Semiconductor

Symbol Micros: TG06N10

392097

TG06N10

Contractor Symbol:

Case : TO252

Datasheet

Technical drawing Add to favourites

N100V,RD(MAX)<240M@10V,VTH1.2V~3 Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	240mOhm
Max. drain current:	6A
Max. power loss:	25W
Case:	TO-252
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	240mOhm
Max. drain current:	6A
Max. power loss:	25W
Case:	TO-252
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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