G06P01E Goford Semiconductor

Symbol Micros: TG06P01E

392098

TG06P01E

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Datasheet

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P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4 Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	40mOhm
Max. drain current:	4A
Max. power loss:	1,8W
Case:	SOT23
Manufacturer:	GOFORD
Max. drain-source voltage:	12V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	40mOhm
Max. drain current:	4A
Max. power loss:	1,8W
Case:	SOT23
Manufacturer:	GOFORD
Max. drain-source voltage:	12V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	10V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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