G08P06D3 Goford Semiconductor

Symbol Micros: TG08P06D3

392101

TG08P06D3

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Datasheet

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P60V,RD(MAX)<52M@-10V,VTH-2V~-3. Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	52mOhm
Max. drain current:	20A
Max. power loss:	40W
Case:	DFN3x3-8L
Manufacturer:	Goford
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	52mOhm
Max. drain current:	20A
Max. power loss:	40W
Case:	DFN3x3-8L
Manufacturer:	Goford
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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