G09P02L Goford Semiconductor

Symbol Micros: TG09P02L

392102

TG09P02L

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Datasheet

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P20V,RD(MAX)<23M@-4.5V,RD(MAX)<3 Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	25mOhm
Max. drain current:	9A
Max. power loss:	2,5W
Case:	SOT23-3
Manufacturer:	GOFORD
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	25mOhm
Max. drain current:	9A
Max. power loss:	2,5W
Case:	SOT23-3
Manufacturer:	GOFORD
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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