G1002L Goford Semiconductor

Symbol Micros: TG1002L

392103

TG1002L

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Datasheet

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N100V,RD(MAX)<250M@10V,VTH1.2V~2 Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	260mOhm
Max. drain current:	2A
Max. power loss:	1,3W
Case:	SOT-23-3L
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	260mOhm
Max. drain current:	2A
Max. power loss:	1,3W
Case:	SOT-23-3L
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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