G1003A Goford Semiconductor

Symbol Micros: TG1003A
Contractor Symbol:
Case :  
N100V,RD(MAX)<210M@10V,RD(MAX)<2 Transistors - FETs, MOSFETs - Single
Parameters
Open channel resistance: 130mOhm
Max. drain current: 3A
Max. power loss: 1,5W
Case: SOT-23-3L
Manufacturer: GOFORD
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 130mOhm
Max. drain current: 3A
Max. power loss: 1,5W
Case: SOT-23-3L
Manufacturer: GOFORD
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD