G1006LE Goford Semiconductor

Symbol Micros: TG1006LE

392106

TG1006LE

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Datasheet

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N100V,RD(MAX)<150M@10V,RD(MAX)<1 Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	130mOhm
Max. drain current:	3A
Max. power loss:	1,5W
Case:	SOT-23-3L
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	130mOhm
Max. drain current:	3A
Max. power loss:	1,5W
Case:	SOT-23-3L
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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