G12P04K Goford Semiconductor

Symbol Micros: TG12P04K

392113

TG12P04K

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Datasheet

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P40V,RD(MAX)<35M@-10V,RD(MAX)<45 Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	45mOhm
Max. drain current:	12A
Max. power loss:	50W
Case:	TO-252
Manufacturer:	GOFORD
Max. drain-source voltage:	40V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	45mOhm
Max. drain current:	12A
Max. power loss:	50W
Case:	TO-252
Manufacturer:	GOFORD
Max. drain-source voltage:	40V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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