G15N06K Goford Semiconductor

Symbol Micros: TG15N06K

392115

TG15N06K

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Datasheet

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N-CH, 60V,15A,RD(MAX)<45M@10V,RD Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	50mOhm
Max. drain current:	15A
Max. power loss:	40W
Case:	TO-252
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	50mOhm
Max. drain current:	15A
Max. power loss:	40W
Case:	TO-252
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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