G16P03D3 Goford Semiconductor

Symbol Micros: TG16P03D3

392118

TG16P03D3

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P30V,RD(MAX)<12M@-10V,RD(MAX)<18 Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	16mOhm
Max. drain current:	45A
Max. power loss:	55W
Case:	DFN3x3-8L
Manufacturer:	GOFORD
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	16mOhm
Max. drain current:	45A
Max. power loss:	55W
Case:	DFN3x3-8L
Manufacturer:	GOFORD
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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