G2014 Goford Semiconductor

Symbol Micros: TG2014

392121

TG2014

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Datasheet

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N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	11mOhm
Max. drain current:	14A
Max. power loss:	3W
Manufacturer:	GOFORD
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	12V

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• Parameters

Open channel resistance:	11mOhm
Max. drain current:	14A
Max. power loss:	3W
Manufacturer:	GOFORD
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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