G20N06D52 Goford Semiconductor

Symbol Micros: TG20N06D52

388748

TG20N06D52

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Datasheet

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N60V,RD(MAX)<30M@10V,RD(MAX)<40M Transistors - FETs, MOSFETs - Arrays

Parameters

Open channel resistance:	40mOhm
Max. drain current:	20A
Max. power loss:	48W
Case:	DFN5x6 Dual
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	40mOhm
Max. drain current:	20A
Max. power loss:	48W
Case:	DFN5x6 Dual
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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