G20P10KE Goford Semiconductor

Symbol Micros: TG20P10KE

392125

TG20P10KE

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P-CH, -100V, 20A, RD(MAX)<116M@- Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	116mOhm
Max. drain current:	20A
Max. power loss:	69W
Case:	TO-252
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	116mOhm
Max. drain current:	20A
Max. power loss:	69W
Case:	TO-252
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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