G2R1000MT17J

Symbol Micros: TG2R1000MT17J

381055

TG2R1000MT17J

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Datasheet

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Transistor N-Channel SiCFET MOSFET; 1700V; 20V; 1,2Ohm; 3A; 54W; -55°C~175°C;

Parameters

Open channel resistance:	1,2Ohm
Max. drain current:	3A
Max. power loss:	54W
Case:	TO-263-7
Manufacturer:	GeneSiC
Max. drain-source voltage:	1700V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: NAVITAS SEMICONDUCTOR Manufacturer part number: G2R1000MT17J Case style:    

External warehouse:

1400 pcs.

Quantity of pcs.	50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	3,3514

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Packaging:
50

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	1,2Ohm
Max. drain current:	3A
Max. power loss:	54W
Case:	TO-263-7
Manufacturer:	GeneSiC
Max. drain-source voltage:	1700V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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